Electrophoretic Deposited Quartz Powder-Assisted Growth of Multicrystalline Silicon

Ingot multicrystalline silicon (Mc-Si) needs to be improved in quality and reduced cost compared with Czochralski monocrystalline silicon. A uniform dense quartz nucleation layer was obtained by the electrophoretic deposition of powder on surface wafer. The deposited wafer annealed at 600 °C for 1 h, one side glued crucible. During growth Mc-Si crystal, can play a role. results show that average lifetime minority carriers quartz-assisted ingot is 7.4 μs. overall dislocation density an silica low, defect middle 1.5%, which significantly lower than spray (3.1%) particle (4.2%). Moreover, mc-Si obtain oriented grains, offers potential apply alkaline texturing wafers.